Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7939464 | Superlattices and Microstructures | 2018 | 7 Pages |
Abstract
Effect of indium (In) droplets on InGaN thin films grown by molecular beam epitaxy (MBE) has been investigated. The surface of InGaN covered by In droplets shows a smoother topography than that without droplets, indicating that the presence of In droplets is beneficial to the two dimensional growth. Beneath the In droplets, many ring-like structures are observed. The arrangement of these “ring” shows the movement of the In droplets during the InGaN growth. A qualitative growth model is proposed to explain the evolution of the InGaN surface morphology in In-droplet-induced-epitaxy process, giving an explanation that a local vapor-liquid-solid (VLS) system is preferentially formed at the edge of the droplets, leading to a high growth rate. Furthermore, the energy dispersive X-ray spectroscopy results reveal that the relatively higher In/Ga flux ratio in the region covered by the In droplet results in a locally higher In content.
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Authors
Xiantong Zheng, Hongwei Liang, Ping Wang, Xiaoxiao Sun, Zhaoying Chen, Tao Wang, Bowen Sheng, Yixin Wang, Ling Chen, Ding Wang, Xin Rong, Mo Li, Jian Zhang, Xinqiang Wang,