Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7939498 | Superlattices and Microstructures | 2018 | 7 Pages |
Abstract
We demonstrate AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sputter-deposited AlN templates upon sapphire substrates. An AlN/AlGaN superlattices structure is inserted as a dislocation filter between the LED structure and the AlN template. The full width at half maximum values for (0002) and (101¯2) X-ray rocking curves of the n-type Al0.56Ga0.44N layer are 513 and 1205 arcsec, respectively, with the surface roughness of 0.52 nm. The electron concentration and mobility measured by Hall measurement are 9.3 Ã 1017cmâ3 and 54 cm2/V·s at room temperature, respectively. The light output power of a 282-nm LED reaches 0.28 mW at 20 mA with an external quantum efficiency of 0.32%. And the values of leakage current and forward voltage of the LEDs are â¼3 nA at â10 V and 6.9 V at 20 mA, respectively, showing good electrical performance. It is expected that the cost of the UV-LED can be reduced by using sputter-deposited AlN template.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Lu Zhao, Shuo Zhang, Yun Zhang, Jianchang Yan, Lian Zhang, Yujie Ai, Yanan Guo, Ruxue Ni, Junxi Wang, Jinmin Li,