Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
79395 | Solar Energy Materials and Solar Cells | 2010 | 4 Pages |
Abstract
We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 °C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p+ nc-Si:H as a window layer, complete p–i–n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.
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Authors
Y. Vygranenko, E. Fathi, A. Sazonov, M. Vieira, A. Nathan,