A new design approach for enhancement of DC/RF performance with improved ambipolar conduction of dopingless TFET

In this article, we propose a new device structure to suppress ambipolar conduction with improved DC/RF performance of dopingless TFET (DL-TFET). Here gate underlapping technique is applied near drain side to suppress ambipolarity, which results improved Analog/RF performance of the device. In addition to gate underlapping technique, a novel initiative has also been taken by placing a metal angle (MA) in the oxide layer near source/channel interface to get excellent DC characteristics of the proposed device. Placement of MA is helpful to increase abruptness at source/channel interface for higher tunneling rate of charge carriers. Length variation of gate underlapping has been performed in the section of device optimization for reducing ambipolarity of the device. Simultaneously, variation in workfunction and position of metal angle is also analysed in this section to ease the fabrication complexity.