Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7939647 | Superlattices and Microstructures | 2017 | 7 Pages |
Abstract
Earth-abundant Cu2ZnSn(S,Se)4(CZTSSe) thin film photovoltaic absorber layers were fabricated by co-evaporated Cu, ZnS, SnS and Se sources in a vacuum chamber followed by annealing at tubular furnace for 30 min at 550 °C. In this paper, we investigated the metal elements with stoichiometric ratio film to study the effect of annealing conditions of Se, SnS + Se, S and SnS + S atmosphere on the structure, surface morphological, optical and electrical properties of Cu2ZnSn(S,Se)4 thin films respectively. These films were characterized by Inductively Coupled Plasma-Mass Spectrometer, scanning electron microscopy, X-ray diffraction to investigate the composition, morphological and crystal structural properties. The grain size of samples were found to increase after annealing. XRD patterns confirmed the formation of pure polycrystalline CZTSSe thin films at S atmosphere, the optical band gaps are 1.02, 1.05, 1.23, 1.35 eV for Se, SnS + Se, SnS + S and S atmosphere respectively.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yuming Xue, Bingbing Yu, Wei Li, Shaojun Feng, Yukun Wang, Shengming Huang, Chao Zhang, Zaixiang Qiao,