Optimization of Type-II 'W' shaped InGaAsP/GaAsSb nanoscale-heterostructure under electric field and temperature

Designing of a type-II nanoscale heterostructure and simulating their optical properties is critical for many applications and remains a challenge. This paper reports designing of a complex type - II 'W' shaped symmetric InGaAsP/GaAsSb nano-scale heterostructure grown on InP substrate and mechanism of the transitions taking place within the heterostructure which are responsible for optical properties. In addition, the band alignment, optical gain and lasing wavelength are also studied under the effect of applied external electric field ranging from 10 to 200 kV/cm and variable temperature. On the basis of outcome of the calculations, the proposed heterostructure can be claimed to show a very high optical gain (∼8000/cm) within the MIR (mid infrared) region. Moreover, the results achieved in the study suggest that the application of the both variable temperature and applied external electric field on the heterostructure can control the optical gain as well as lasing wavelength linearly. Due to the linear behavior of the proposed heterostructure, the tunable type -II InGaAsP/GaAsSb nano-scale heterostructure can be claimed as a very suitable heterostructure for the designing of photovoltaic devices operating in the IR region.