| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7939771 | Superlattices and Microstructures | 2017 | 25 Pages |
Abstract
The surface potential is determined for three different regions by solving 1-D Poisson's and 2-D Laplace equation through separation of variable method to facilitate an optimal model for calculating the subthreshold drain current from Si-SiO2 interface boundary. The developed model results are in good agreement with that of ATLAS-TCAD simulation.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Manoj Kumar, Subhasis Haldar, Mridula Gupta, R.S. Gupta,