A new method for synthesis of As-Te chalcogenide films

A novel Plasma Enhanced Chemical Vapor Deposition method for synthesis of amorphous AsxTe100-x (31 ≤ x ≤ 49) films is demonstrated. The innovative process has been developed in a non-equilibrium low-temperature argon plasma under reduced pressure, employing for the first time volatile As and Te as precursors. Utilization of inorganic precursors, in contrast to the typically used in CVD metal-organic precursors, has given us the chance to achieve ≿halcogenide As-Te films of very high quality and purity. Phase and structural evolution of the As-Te system, based on equilibrium coexistence of two phases (AsTe and As2Te3) has been studied. The dependence of structure and optical bandgap of the chalcogenide materials on their composition was established. The newly developed process is cost-effective and enables deposition of As-Te films with a thickness ranging from 10 nm to 10 μm, the latter is highly desireable for one-mode planar waveguides applications and in other components of integral optics.