Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7939836 | Superlattices and Microstructures | 2017 | 14 Pages |
Abstract
Famatinite (Cu3SbS4) thin films were prepared by annealing chemically grown Sb2S3-CuS stacks in a graphite box at 370-430 °C for 30 min under sulfur and N2 atmospheres. The films grown at 370 °C contain a minor CuSbS2 phase with dominant Cu3SbS4. Those films prepared at 400 °C and 430 °C are single-phase Cu3SbS4 with a tetragonal structure and lattice parameters a = 0.537 nm and b = 1.087 nm and a crystallite size of 25 nm. The grain size of the films increases as the annealing temperature is increased to 400 °C and subsequently decreases. The film morphology is compact and void-free with a grain size of 300-800 nm at 400 °C. The band gap of the films is 0.89 eV. The films exhibited p-type electrical conductivity and a relatively high hole mobility of 14.70 cm2Vâ1sâ1 at 400 °C. Their attractive optoelectronic properties suggest that these films are suitable as solar cell absorber layers.
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Authors
U. Chalapathi, B. Poornaprakash, Hao Cui, Si-Hyun Park,