| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7939971 | Superlattices and Microstructures | 2017 | 7 Pages |
Abstract
This paper deals with the Early effect of SiGe HBTs. Simple, analytical expressions are derived for forward and reverse Early voltages, considering different Ge profiles in the base, including box, triangular, and trapezoidal profiles. The SiGe parameters of the electron diffusion coefficient and the intrinsic carrier concentration are adopted to modify the traditional model. It is predicted that the triangular and box Ge shapes in the base of SiGe HBTs correspond to the best forward and reverse Early voltages, respectively.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Xiaobo Xu, Wenping Gu, Si Quan, Zan Zhang, Lin Zhang,