Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7940043 | Superlattices and Microstructures | 2017 | 11 Pages |
Abstract
320 Ã 256 mid-infrared focal plane arrays, together with linear arrays and single element devices, were fabricated based on type-II InAs/GaSb superlattice. At 77 K, the diode shows 50% cut-off wavelength of 4.8 μm and peak quantum efficiency of 38% at 3.7 μm without any bias dependence. The dominant dark current mechanisms at different temperatures are identified by R0A analysis. At 160 K, R0A of 2.2 Ã 103 Ω cm2 and specific detectivity of 1.8 Ã 1011 cm Hz0.5/W are demonstrated. Infrared imaging with an integration time of 5 ms demonstrates noise equivalent temperature difference of 12.3 mK and 34.2 mK, separately at 90 K and 120 K.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yaoyao Sun, Guowei Wang, Xi Han, Wei Xiang, Dongwei Jiang, Zhi Jiang, Hongyue Hao, Yuexi Lv, Chunyan Guo, Yingqiang Xu, Zhichuan Niu,