Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7940055 | Superlattices and Microstructures | 2017 | 31 Pages |
Abstract
A method to determine the strain distribution of the AlGaN barrier layer after the device fabrication and the passivation process has been presented. By fitting the calculated parasitic source access resistance with the measured ones for the AlGaN/AlN/GaN HFETs and using the polarization Coulomb field scattering theory, the strain variation of the AlGaN barrier layer after the passivation process has been quantitatively studied. The results show that the tensile strain in the access regions of the AlGaN barrier layer has been increased by 4.62% for the 250Â nm-Si3N4 passivated device, and has been decreased by 2.0% for the 400Â nm-Si3N4 passivated device, compared to that of before the passivation, respectively. For the gate region of the two devices, the tensile strain has been decreased by 60.77% and increased by 3.60% after the passivation of different thicknesses, oppositely.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Chen Fu, Zhaojun Lin, Yan Liu, Peng Cui, Yuanjie Lv, Yang Zhou, Gang Dai, Chongbiao Luan,