Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7940125 | Superlattices and Microstructures | 2017 | 8 Pages |
Abstract
The structural and electronic properties of Gr/BN and Gr/H-BN-H heterostructures have been systematically investigated on density functional theory with van der Waals corrections. The results indicate that the band gap of Gr/H-BN-H is about 0.024Â eV (without an electric field) and 0.412Â eV (with a strong electric field). Moreover, the increase of band gap of Gr/BN and Gr/H-BN-H heterostructures does not lead an obvious drop in their carrier mobility. Meanwhile, Gr/H-BN-H heterostructure has a larger tunable range of band gap and carrier mobility than Gr/BN heterostructure. These electronic properties highlight graphene/BN potential applications in nanodevices with low energy consumption.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
W.X. Zhang, M.M. Dong, T.T. Li, J.L. Gong, C. He,