Investigation of Ge based double gate dual metal tunnel FET novel architecture using various hetero dielectric materials

In this manuscript, Ge based dual metal double gate Tunnel Field Effect Transistor device has been investigated to overcome the challenges in conventional Si based TFET. This device gives a better drive current and an average Subthreshold slope using Ge channel. The performance analysis is done for various values of doping concentration and also for different hetero dielectric materials. It has very low leakage current (9.27 × 10−13 A/μm), a high on current (1.3 × 10−4 A/μm), giving an average Subthreshold slope of 34 mV/dec. This shows the device is better suitable for low power applications.