Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7940215 | Superlattices and Microstructures | 2017 | 17 Pages |
Abstract
Two structures of InGaN/GaN multiple quantum well solar cells are grown and fabricated in this work, which are 30 periods In0.14Ga0.86N/GaN (1.72 nm/4.14Â nm, sample A) and In0.19Ga0.81N/GaN (2.76 nm/4.14Â nm, sample B), respectively. The peak external quantum efficiency of sample A can reach over 60%, which is considered to be related with the longer carrier lifetime. The current density-voltage characteristics show that sample A exhibited an open-circuit voltage of 2.13Â V, a short-circuit current density of 2.55Â mA/cm2, a fill-factor of 65.7% and a conversion efficiency of 3.56%. Those indicators are among the best up to date as far as we know for InGaN/GaN solar cells.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Shiming Liu, Quan Wang, Hongling Xiao, Kun Wang, Cuimei Wang, Xiaoliang Wang, Weikun Ge, Zhanguo Wang,