Performance Evaluation of a Novel GAA Schottky Junction (GAASJ) TFET with Heavily Doped Pocket

The evolution of microelectronics industry is only possible through a combined effort of device miniaturization, innovative device structures and improved material property retaining the same functional efficiency. Out of several non-conventional device structures proposed in the literature, Tunneling Field Effect Transistor (TFET) is becoming a probable alternative device for future generation VLSI circuits due to its inherent feature of carrier conduction by the band to band tunneling mechanism. In the present work, a novel Gate All Around Schottky Junction (GAASJ) TFET with Highly Doped Pocket (HDP) and stacked gate oxide is proposed and investigated by Synopsys 3D TCAD. The device under consideration is having a Schottky Junction between Source made up of Nickel Silicide (NiSi2) and HDP which provides the steep tunneling width and improvises the device performance in terms of vital parameters such as ION, ION/IOFF and Subthreshold Slope (SS). The reported parameters of the proposed GAASJ TFET have shown improvement in the technological mode of TFETs with ION ∼10−5 A and SS ∼58.2 mV/decade. We have found 15x ION/IOFF for the GAASJ-HDP TFET over the conventional GAA TFET.