Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7940467 | Superlattices and Microstructures | 2017 | 17 Pages |
Abstract
The DC and microwave characteristics of 20 nm gate length (Lg) InAlN/GaN High electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have investigated for both depletion mode (D-mode) and Enhancement mode (E-mode) operation using Synopsys TCAD tool. The simulation is performed at room temperature by using drift-diffusion model. The device having the features of recessed T - gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed novel Lg = 20 nm, W = 2 Ã 40 μm D-mode (E-mode) HEMT exhibited a peak drain current density (Idmax) of 2.7 (2.6) A/mm, transconductance (gm) of 1.04 (1.63) S/mm, current gain cut-off frequency (ft) of 310 (343) GHz and power gain cut-off frequency (fmax) of 364 (236) GHz. The measured carrier mobility (μ), sheet charge carrier density (ns) and breakdown voltage are 1580 (1615) cm2/Vâs, 1.9 Ã 1013 (1.93) Cmâ2 and 10.7 (12.8) V respectively. The superlatives of the proposed HEMTs are bewitching competitor for future sub-millimetre wave high power RF VLSI circuit applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
P. Murugapandiyan, S. Ravimaran, J. William, J. Ajayan, D. Nirmal,