Electron states and electron Raman scattering in semiconductor step-quantum well: Electric field effect

In this work we determine and show the expressions of the electron states of a step-quantum well with the presence of an external electric field, developed in a GaAs/AlGaAs matrix. The electron states are obtained using the envelope function approximation. In this work it is only necessary to consider a single conduction band, which due to the confinement is divided into a subband system, with T=0K. Expressions for the electron states and the differential cross-section for an intraband electron Raman scattering process of are presented, the net Raman gain is also calculated. In addition, the interpretation of the singularities found in the emission or excitation spectra is given, since several dispersion configurations are discussed. Furthermore, the effects of an electric field on the electron states and on the differential cross section are studied.