High temperature performance of Si:HfO2 based long channel Double Gate Ferroelectric Junctionless Transistors

In this work, we present a study that explores the suitability of Double Gate Ferroelectric Junctionless Transistor (DGFJL) incorporating Si:HfO2 for high temperature applications. At present, very few studies are focussed on Si:HfO2 to investigate its integrability in the present CMOS design space. Therefore, in the present study, using analytical modeling and TCAD simulations, it is demonstrated that Si:HfO2 based DGFJL exhibits superior performance in terms of substantial gain, reduced leakage currents, improved current drivability and high Ion/Ioff ratio at elevated temperatures as compared to the DGJL counterpart. The study, thus, highlights the fact that DGFJL is a potential candidate for device applications at high temperatures.