| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7940969 | Superlattices and Microstructures | 2017 | 5 Pages |
Abstract
As we all know that, the performance and characteristics of any semiconductor device are effected by change in operating temperature. The temperature dependencies of the transport properties of InAlN/Al14N15N have been investigated using theoretical and mathematical study. Here we have considered the Al14N15N with different ratio of 14N and 15N for the analysis owing to considerable interest in superlattice structures of large band gap semiconductors having various favourable material properties such as very high thermal conductivity, high carrier mobility and wide bandwidth operation. This paper deals with analysis of temperature effect on some of the device modelling parameters like carrier mobility and scattering.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kaushik Mazumdar, Rajeev Kumar Ranjan, Ravi Shankar, Bindu Priyadarshini, Aniruddha Ghosal,