Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7941048 | Superlattices and Microstructures | 2017 | 10 Pages |
Abstract
In this paper, a novel junctionless Ge n-Tunneling Field-Effect Transistors (TFET) structure is proposed. The simulation results show that Ion = 5.5 Ã 10â5A/μm is achieved. The junctionless device structure enhances Ion effectively and increases the region where significant BTBT occurs, comparing with the normal Ge-nTEFT. The impact of the lightly doped drain (LDD) region is investigated. A comparison of Ion and Ioff of the junctionless Ge n-TFET with different channel doping concentration ND and LDD doping concentration NLDD is studied. Ioff is reduced 1 order of magnitude with the optimized ND and NLDD are 1 Ã 1018cmâ3 and 1 Ã 1017 cmâ3, respectively. To reduce the gate induced drain leakage (GIDL) current, the impact of the sloped gate oxide structure is also studied. By employing the sloped gate oxide structure, the below 60 mV/decade subthreshold swing S = 46.2 mV/decade is achieved at Ion = 4.05 Ã 10â5A/μm and Ion/Ioff = 5.7 Ã 106.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Xiangyu Liu, Huiyong Hu, Bin Wang, Meng Wang, Genquan Han, Shimin Cui, Heming Zhang,