The influence of acoustic-dislocation interaction on intensity of the bound exciton recombination in initial and irradiated GaAsP LEDs structures

Acoustic-excitant interaction of GaAsP light emitting diodes (initial and irradiated by 2 MeV electrons) was studied. Structure based on GaAs1-хPх solid solutions, grown by epitaxy from the vapor phase, were the object of the research. It was observed that ultrasonic treatment (UST) results in the drop of the emitting intensity of structures, which relaxes to the previous values after ultrasound termination. The possible reason of observed changes concerning nonequilibrium dislocation clusters were discussed. Electron irradiation leads to the exponential drop of emitting intensity, which restores after UST much slower than initial one. Radiation degradation parameters τ0/Kτ of yellow and orange LEDs were found.