Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7941090 | Superlattices and Microstructures | 2017 | 6 Pages |
Abstract
The optical gain spectra of doped lattice-matched GaNAsBi-based single quantum well (SQW) was theoretically investigated using a (16 Ã 16) band anti-crossing (BAC) model combined with self-consistent calculation. For the sake of comparison, we computed the optical gain of both (i-n-i) and (i-p-i) doped well types in GaAs/GaNAsBi/GaAs quantum structure. The highest obtained material gain Gmax was 1.2Ã104cmâ1 for (i-n-i) type doped with N2Dd=2.5Ã1012cmâ2. We proposed investigating the p-i-n type structure to enhance the optical performance of GaAs/GaNAsBi/GaAs SQW. The Bi composition was optimized in order to obtain Te1âh1=1.55μm. The effect of well width on optical gain spectra was also discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
I. Guizani, C. Bilel, M.M. Habchi, A. Rebey,