Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
79411 | Solar Energy Materials and Solar Cells | 2010 | 6 Pages |
Abstract
Structures consisting of a single layer of silicon quantum dots in silicon dioxide matrix represent a promising approach to implement energy selective contacts for hot carrier solar cells. The opening of the band gap and the resonant tunneling effect allow extraction of carriers within a narrow tunable range of energies. In this work, several silicon quantum dots double barrier structures have been realized using RF-magnetron co-sputtering. Quantum confinement properties of silicon quantum dots and the influence of the annealing process duration on crystallization have been investigated using photoluminescence measurements.
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Authors
P. Aliberti, S.K. Shrestha, R. Teuscher, B. Zhang, M.A. Green, G.J. Conibeer,