Article ID Journal Published Year Pages File Type
7941261 Superlattices and Microstructures 2017 14 Pages PDF
Abstract
A new structure of the laterally diffused metal-oxide-semiconductor transistors (LDMOS) using a high permittivity (Hk) dielectric is proposed, and its mechanism is investigated by 2-D TCAD simulation. The breakdown voltage (BV) is remarkably increased by using the Hk dielectric. Moreover, a reverse biased poly diode is first introduced on the Hk dielectric, which assists the n-drift region forming an electron accumulation layer to reduce the specific on-resistance (Ron,sp) further. Compared with a conventional LDMOS with the same geometry, the BV increases by 24%, and the Ron,sp decreases approximately by 50%. Besides, the proposed structure is less sensitive to the n-drift region doping deviation, and exhibits a larger safe operating area (SOA).
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Authors
, , , , ,