Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7941261 | Superlattices and Microstructures | 2017 | 14 Pages |
Abstract
A new structure of the laterally diffused metal-oxide-semiconductor transistors (LDMOS) using a high permittivity (Hk) dielectric is proposed, and its mechanism is investigated by 2-D TCAD simulation. The breakdown voltage (BV) is remarkably increased by using the Hk dielectric. Moreover, a reverse biased poly diode is first introduced on the Hk dielectric, which assists the n-drift region forming an electron accumulation layer to reduce the specific on-resistance (Ron,sp) further. Compared with a conventional LDMOS with the same geometry, the BV increases by 24%, and the Ron,sp decreases approximately by 50%. Besides, the proposed structure is less sensitive to the n-drift region doping deviation, and exhibits a larger safe operating area (SOA).
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Jing Deng, Mingmin Huang, Junji Cheng, Xinjiang Lyu, Xingbi Chen,