Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7941301 | Superlattices and Microstructures | 2017 | 17 Pages |
Abstract
This paper has proposed the optimum design rules as investigating subthreshold characteristics of 5Â nm DG (Double Gate) MOSFET for top/bottom gate flat-band voltages and oxide thicknesses. The difference of top gate voltages between on-current (10â7A) and off-current (10â12A) is specified as ÎVonâoff, and the top-gate voltage for the on-current is defined as the threshold voltage. ÎVonâoff and the threshold voltage are derived from equations for the drain current and gate voltage for various top/bottom gate flat-band voltages and oxide thicknesses, and compared with those for symmetric structure having equal top/bottom gate flat-band voltages and oxide thicknesses. As a result, the potential distributions for top/bottom gate flat-band voltages and oxide thicknesses influence on directly the tunneling current, which greatly changes ÎVonâoff and the threshold voltage in subthreshold region. It is established that the top flat-band voltage and oxide thickness have to be larger than the bottom flat-band voltage and oxide thickness to reduce ÎVonâoff and threshold voltage, compared with those of symmetric structure.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Hakkee Jung, Sima Dimitrijev,