Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7941318 | Superlattices and Microstructures | 2017 | 16 Pages |
Abstract
In this paper, a novel 4H-SiC metal semiconductor field effect transistor with serpentine channel (SC-MESFET) is proposed which the gate-drain drift region shifts downward integrally compared to the gate-source drift region. With the depth of the gate-drain shift increasing, the channel electric field and the gate depletion layer have been modulated. The simulated results show that the drain saturation current and breakdown voltage of the SC-MESFET are about 21.5% and 46.7% larger than that of the conventional double-recessed 4H-SiC MESFET (DR-MESFET). The gate-source capacitance of proposed structure is also improved from 0.59 pF/mm to 0.51 pF/mm and the DC transconductance of the SC-MESFET is very close to that of the DR-MESFET at the bias conditions of Vgs = 0 V and Vds = 40 V, which results in better RF characteristics. All of the results show that the novel 4H-SiC MESFET with serpentine channel has superior electrical characteristics and performances.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Hujun Jia, Yehui Luo, Hang Zhang, Ding Xing, Peimiao Ma,