Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7941605 | Superlattices and Microstructures | 2016 | 20 Pages |
Abstract
The multi-photon (nonlinear) optical absorption power by electrons in square quantum wells, taking account the electron-confined optical phonon interaction, is calculated using the state-dependent projection technique. We numerically obtain the dependence of the absorption power on the photon energy in the GaAs/AlAs semiconductor quantum well. By analysing this dependence, we show clearly the transition corresponding to each resonant peak, including the optically detected electrophonon resonance (ODEPR). Also, using a computational method, we obtain the line-width of the ODEPR as profiles of the curves. The dependence of the ODEPR line-width on the width of the quantum well shows that the ODEPR line-width for two-photon absorption is about one order of value smaller than it is for one-photon absorption.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Bui Dinh Hoi, Le Thi Thu Phuong, Tran Cong Phong,