| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7941791 | Superlattices and Microstructures | 2016 | 10 Pages |
Abstract
C-V characteristic of Al/TiO2/p-Si (100) MOS systems for the films annealed at 400 °C for the 20, 40, 60 and 80 min in ambient condition.235
Related Topics
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Electronic, Optical and Magnetic Materials
Authors
Gyanan Gyanan, Sandip Mondal, Arvind Kumar,