| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7941822 | Superlattices and Microstructures | 2016 | 12 Pages |
Abstract
The characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with inserted single spike barriers have been investigated. Simulation approach yields a result that, the internal quantum efficiency (IQE), light output power (LOP) and efficiency droop were remarkably improved compared to those with conventional AlGaN multiple quantum wells (MQWs) structures. The key factors for the performance improvements are the modulation of carrier distribution and the increase of the overlap between electron and hole wave functions in MQWs contributing to more efficient recombination of electrons and holes, and thereby a significant enhancement in IQE and light output power.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Weiwei Guo, Fujun Xu, Yuanhao Sun, Lin Lu, Zhixin Qin, Tongjun Yu, Xinqiang Wang, Bo Shen,