Investigation of rapid degradation in GaN-based blue laser diodes

Investigation of the degradation modes in GaN-based blue laser diodes grown by metal organic chemical vapor deposition (MOCVD) is carried out. Early failure of the LDs happened at the initial stage of the aging. After analysis of the electrical and thermal characteristics, local degradation of the active region is observed. Further investigation on the microstructures of the local regions shows that the early failure of the LDs is due to the local structure damage with the formation of gallium metal.