Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7941930 | Superlattices and Microstructures | 2016 | 5 Pages |
Abstract
Low temperature iron gettering in as-grown boron doped Czochralski silicon (Cz-Si) at temperatures between 220 and 500 °C is studied using microwave-photoconductive decay based minority carrier lifetime measurements. Scanning infrared microscopy technique is used to study the defect density/size distribution in the samples before and after anneal. It is found that the decrease of interstitial iron (Fei) concentration shows a double exponential dependence on annealing time at all temperatures. This suggests the existence of two sinks for Fei. Meanwhile, the observed bulk defect densities and sizes in contaminated and as-grown samples are nearly the same, implying that the grown-in defects could be the gettering centers in this process. The results are important for understanding and controlling low temperature Fei gettering during processing of Cz-Si based devices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Haiyan Zhu, Xuegong Yu, Xiaodong Zhu, Yichao Wu, Jian He, Jan Vanhellemont, Deren Yang,