Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7942038 | Superlattices and Microstructures | 2015 | 7 Pages |
Abstract
The characteristics of high frequency and high speed are demonstrated in vertical structure organic thin film transistors (VOTFTs) fabricated by DC magnetron sputtering and vacuum evaporation. The saturated current-voltage characteristics can be determined by drain-source negative bias voltage. Responsive frequency of the device is as high as 20Â kHz when rectangular wave dynamic signal is applied to the gate-source electrode, and switch characteristic time reaches the microsecond. The unsaturated current-voltage characteristics are observed when the drain-source bias voltage is positive. In the condition of VDSÂ =Â 3Â V and VGSÂ =Â 0Â V, the drain-source current IDS is 2.986Â ÃÂ 10â5 A, and the current density is 1.194Â mA/cm2. Cut-off frequency fc is 25Â kHz when a small sine wave dynamic signal is applied to the gate-source electrode. The volt-ampere characteristic of VOTFTs transfers from linear to nonlinear with increasing of drain-source bias voltage.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zeying Wang, Dong Xing Wang, Yongshuang Zhang, Yueyue Wang,