Study of the carrier transport in presence of backscattering in InAs nanowire based MOSFET after GaN

The fetching of a single-flux scattering theory of the InAs nanowire based MOSFET has been presented here. The backscattering coefficient has been studied for 1 nm, 5 nm and 10 nm nanowire radius. The calculations are made for <100>, <110> and <111> nanowire orientations. It has been found that the value of the backscattering coefficient increased as the radius of the nanowire is increased from 1 nm to 10 nm but the spacing between <100>, <110> and <111> nanowire orientations decreased. The drain current IDsat − (VGS − VT) characteristics of InAs ballistic nanowire (5 nm radius) has been discussed in detail. Also, the significant drain current IDsat versus electric field (V/m) characteristics of nonballistic InAs nanowire (5 nm radius) MOSFET transistor for different orientations are obtained.