Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7942259 | Superlattices and Microstructures | 2015 | 7 Pages |
Abstract
This paper principally presents the numerical investigation of electron blocking layers (EBL) structures with different Al concentration gradient changing in AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs). Compared to conventional EBL structure with constant Al composition, the LED with inverted-V-shaped EBL structure has higher output power and carriers recombination rate, but the efficiency droop will decrease obviously while the electron leakage current can reduce much as well. Therefore, the result indicates that appropriate Al component in LED can enhance electron and hole recombination rate in the active region. The improved performance is mainly attribute the sufficient electron-barrier height and relatively higher hole injection efficiency which results from the mitigated band-bending.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Xuancong Fan, Huiqing Sun, Xuna Li, Hao Sun, Cheng Zhang, Zhuding Zhang, Zhiyou Guo,