Article ID Journal Published Year Pages File Type
7942284 Superlattices and Microstructures 2015 43 Pages PDF
Abstract
Investigation of Key analog and RF figures-of-merits is done for varying gate length, underlap length and barrier thickness. Transconductance = 5.34 mS/μm, Gain = 47 dB, fT = 786 GHz and fmax = 832 GHz obtained.
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Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Analog/RF performance of AlInN/GaN underlap DG MOS-HEMT
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