Article ID Journal Published Year Pages File Type
7942381 Superlattices and Microstructures 2015 9 Pages PDF
Abstract
In this manuscript a novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS (E-SiNW-IMOS) based on dopant-free technology is investigated. The key attribute of the proposed device is its polarity controlled dynamic reconfigurability of charge gating mechanism from impact ionization to band-to-band tunneling. This ensures that same device can act as E-SiNW-IMOS or E-SiNW-TFET depending on bias conditions.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS
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