Theoretical study of N-face InGaN light-emitting diodes with GaN-InGaN-GaN barrier near p-side and n-side

The GaN-InGaN-GaN barrier has been designed to replace the conventional GaN barriers near p-GaN and n-GaN side for N-face InGaN/GaN multiple quantum well light-emitting diodes (LEDs). The advantages of the N-face LED with GaN-InGaN-GaN barrier near n-GaN are numerically studied. The EL spectra, power-voltage performance curves, electron concentration, energy band diagrams and radiative recombination rate in the active region are systematically investigated. The simulated results show that the N-face LED with GaN-InGaN-GaN barrier near n-GaN has better performance over its conventional N-face LED and counterpart with GaN-InGaN-GaN barrier near p-GaN due to the appropriately modified energy band diagrams which are favorable for the injection of electrons and enhanced radiative recombination rate in the quantum wells.