Article ID Journal Published Year Pages File Type
7943391 Superlattices and Microstructures 2013 7 Pages PDF
Abstract
This work reports the growth of n-In0.27Ga0.73N/GaN/AlN epitaxial layer on Si(1 1 1) substrate by using plasma-assisted molecular beam epitaxy (MBE) and commercially obtained n-In0.08Ga0.92N/AlN. As-grown and commercial thin films were characterized by using field emission scanning electron microscopy, atomic force microscopy, and high-resolution X-ray diffraction. A high work function metal (Pt) was deposited as metal contact on the thin films, and the electrical characteristics of the films pre- and post-annealed at 500 °C were studied under 3 V. Results show that the electrical characteristics of post-annealed thin films are better than those of pre-annealed thin films.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Authors
, , , , ,