Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7943527 | Superlattices and Microstructures | 2013 | 10 Pages |
Abstract
A GaN HEMT with local doped barrier layer is proposed in this paper. The DC and RF characteristics of the proposed GaN HEMT structure is analyzed by using 2D numerical simulation. The results show that the breakdown voltage is 23% larger than that of the entire doped barrier layer structure due to the extension of depletion layer width between gate and drain electrodes, which reduces the electric field peak value at the right corner of the gate. A theoretical maximum output power density of 16.2Â W/mm has been achieved, which is â¼34% larger than that of the entire doped barrier layer structure, and 7% larger than that of the unintentionally doped barrier layer structure. And the RF simulation results show that the proposed GaN HEMT also improved the maximum stable gain (MSG) by 0.8Â dB up to 25Â GHz due to the decrease of the gate-drain capacitance compared to the unintentionally doped and entire doped barrier layer structures.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Wenli Fu, Yuehang Xu, Bo Yan, Bin Zhang, Ruimin Xu,