Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7943566 | Superlattices and Microstructures | 2013 | 8 Pages |
Abstract
The microstructure properties of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS) analysis were used to investigate a reconstruction pattern, cross section, and crystalline quality of the AlN/GaN/AlN heterostructures on Si (1 1 1) susbstrate. The reflection high energy electron diffraction images indicated a good surface morphology of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate. The full width at half maximum (FWHM) obtained from XRD measurement was 0.46° (27.6 arcmin), indicating a good quality layer of sample. From TEM measurements, it is found that the crystalline quality of the AlN/GaN/AlN heterostructures is good comparable with previous report.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M.Z. Mohd Yusoff, A. Mahyuddin, Z. Hassan, Y. Yusof, M.A. Ahmad, C.W. Chin, H. Abu Hassan, M.J. Abdullah,