Electron Raman scattering of a donor in a two-dimensional anisotropic quantum dot

The electron Raman scattering process associated with a donor confined by a two-dimensional anisotropic quantum dot has been investigated. Calculations are performed by using the variational method and the perturbation theory within the effective mass approximation. With typical semiconducting GaAs based materials, the differential cross-section has been examined based on the computed energies and wave functions. The results show that the electron Raman scattering of a donor in anisotropic quantum dot is strongly affected by the degree of anisotropy of the QD, the dot size, and the polarized direction of the incident electromagnetic wave.