Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
795157 | Journal of Materials Processing Technology | 2008 | 4 Pages |
Abstract
A novel rare earth metal seed Tb was employed as the catalyst to grow GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(1 1 1) substrates. Studies by X-ray diffraction indicate that the nanorods are hexagonal GaN. Observations by scanning electron microscopy and high-resolution transmission electron microscopy show that GaN is of single-crystal nanorod structure. Photoluminescence spectrum shows the products possess good luminescent properties. The growth mechanism of GaN nanorods is also discussed.
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Authors
Jinhua Chen, Chengshan Xue, Huizhao Zhuang, Hong Li, Lixia Qin, Zhaozhu Yang,