Article ID Journal Published Year Pages File Type
795157 Journal of Materials Processing Technology 2008 4 Pages PDF
Abstract

A novel rare earth metal seed Tb was employed as the catalyst to grow GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(1 1 1) substrates. Studies by X-ray diffraction indicate that the nanorods are hexagonal GaN. Observations by scanning electron microscopy and high-resolution transmission electron microscopy show that GaN is of single-crystal nanorod structure. Photoluminescence spectrum shows the products possess good luminescent properties. The growth mechanism of GaN nanorods is also discussed.

Related Topics
Physical Sciences and Engineering Engineering Industrial and Manufacturing Engineering
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