| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7952514 | Nano Energy | 2018 | 6 Pages |
Abstract
Strain sensor based on piezotronic bipolar transistor has ultrahigh sensitivity by changing the built-in electric potential in junction. The gauge factor of this novel strain sensor based on piezotronic bipolar transistor device has reach over 104, because of the large variation of the carrier transport at the interface of the emitter-base junction of transistor by applied strain.180
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Physical Sciences and Engineering
Energy
Energy (General)
Authors
Ping Zhu, Ziming Zhao, Jiaheng Nie, Gongwei Hu, Lijie Li, Yan Zhang,