Principles of dopant-free electron-selective contacts based on tunnel oxide/low work-function metal stacks and their applications in heterojunction solar cells

The functionalization of dopant-free electron-selective contact (ESC) design based on nanoscale SiOx films capped with low work-function metals (WFMs) was demonstrated, which can simultaneously achieve moderate-level passivation and low contact resistivity on lightly doped n-type c-Si.195