| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7953896 | Nano Energy | 2015 | 7 Pages |
Abstract
Self-implantation of Si creates vacancy and interstitial defects in the Si nano-film that are slightly displaced from one-another. After short-time annealing, a net concentration of vacancies is created in the nano-film - a novel way to significantly reduce thermal conductivity.
Related Topics
Physical Sciences and Engineering
Energy
Energy (General)
Authors
Nick S. Bennett, Neil M. Wight, Srinivasa R. Popuri, Jan-Willem G. Bos,