Calculation of Valence Band Structure and Band Dispersion in Indium containing III-V Bismides by k⋠p method

Bi related impurity levels formed below the valence band maximum in indium containing III-V bismides (InPBi, InSbBi and InAsBi) in (a) causes the splitting of the light hole (LH), heavy hole (HH) and spin-orbit split-off (SO) bands into a series of E+ and E− sub bands shown in (b). Band gap reduction in these bismides due to the upward movement of the HH/LH E+ energy level and the increase in spin orbit splitting energy due to the increase in ESO+ energy sub band at Γ = 0 is shown in (c). Calculated band dispersion relations for the bismides in the Δ-, Λ- and Σ-directions for E+ sub bands and E− sub bands (in the inset) is depicted in (d).128