Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
79593 | Solar Energy Materials and Solar Cells | 2010 | 4 Pages |
Abstract
A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn1−xGaxSe2 (x=0, 0.25, 0.5, 0.75, 1) materials. An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C in a nitrogen atmosphere for 20 min. All materials have mixed clustered plate, spherical particle, and nanorod morphologies with the smallest particle diameters ranging between 20 and 40 nm. Raman spectroscopy and X-ray diffraction (XRD) confirm that indium/gallium ratio control is possible over a wide range. The solvothermal reaction step yields a mixture of chalcopyrite and Cu2−xSe. This is converted to pure chalcopyrite product by annealing at 500 °C.
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Authors
J. Olejníček, C.A. Kamler, A. Mirasano, A.L. Martinez-Skinner, M.A. Ingersoll, C.L. Exstrom, S.A. Darveau, J.L. Huguenin-Love, M. Diaz, N.J. Ianno, R.J. Soukup,