| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7961996 | Computational Materials Science | 2012 | 5 Pages |
Abstract
⺠We present a new modification of the solid-on-solid heteroepitaxial KMC model. ⺠It is based on a prefactor of the elastic correction to the energy barrier. ⺠A hypothesis about the evolution of the effective misfit strain is proposed. ⺠Predicted critical layer thickness shows a good agreement with previous results. ⺠The model is successfully applied to the system InAs/GaAs (0 0 1).
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
P.P. Petrov, W. Miller,