Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7969587 | Materials Characterization | 2017 | 6 Pages |
Abstract
SiCw-SiC foams with hollow skeleton were synthesized by a simple procedure that consisted of the chemical vapor infiltration (CVI) and oxidation process. Flexible carbon foam was employed as CVI template. A typical structure of SiCw-SiC foams consisting of SiC supporter with hollow skeleton structure accompanying numerous crooked SiC whiskers was obtained after burning out carbon skeleton of the carbon foam during oxidation process. SiCw-SiC foams have a density of 0.11 â¤Â Ï â¤Â 0.12 g/cm3, porosity â¥Â 96% and a thermal conductivity at room temperature between 0.040 and 0.075 W/m·K. Thermal conductivity of the SiCw-SiC foams moderately increased with elevation of temperature, indicating that these foams with larger amount of whiskers exhibit excellent thermal insulation property at elevated temperature.
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Authors
Shengjie Yu, Zhaofeng Chen, Yang Wang, Ruiying Luo, Binbin Li, Zhou Chen, Ying Pan,